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LF412: Difference for FL412 between date code TI48M AG38 and TI58M AFHL

Stephane JUHEL
Intellectual 330 points

Part Number: LF412

Hello,

Could you give me the difference for FL412CD between date code TI48M AG38 and TI58M AFHL.

When i perform diod tests between output pin and power supply pins, i get different results. Does the internal schematic diagram of the component changed ?

Thanks and best regards 

Stéphane JUHEL

  • +1
    TI__Expert 6330 points

    Hi Stéphane,

    The differences you are seeing in the LF412 can be attributed to the PCN found HERE. This PCN change is part of TI’s multiyear plan to transition products from our 150-millimeter factories to newer, more efficient manufacturing processes and technologies, underscoring our commitment to product longevity and supply continuity.

    The diode test failure you are currently seeing is due to the updated ESD structures inside the op amp. Since the topology of the op amp has changed, the inherent resistance from the diode structure is also different. This can lead to false failures in a system level board test. Most diodes follow the same general IV curve, with a forward bias voltage around 0.7V for silicon diodes. However, all diodes vary and updating the ESD cells can change the IV curve characteristics enough to lead to the false failures you are seeing.

    Note that while the diode structure of a device can change, there is no change in the functional behavior of the device during normal operation. The protection structures are only triggered during abnormal device operation, such as an ESD event. For more information on ESD Cells in Op amps, please see this application note.

    Let me know if you have further questions.

    Best regards,
    Carrie