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TLE2064: TLE2064IDR Part Marking, PCN, and Part Performance Question

Landon Oglesby
Prodigy 10 points

Part Number: TLE2064

My company has products that have been using the TLE2064ID component for over a decade and our suppliers are likely using the TLE2064IDR at this point. We are using the TLE2064ID componentas a Schmitt trigger / threshold comparator with output clamping to control a mosfet gate.

This year, we have, all of a sudden, a lot of over 50 units that are failing our standard testing identically. This number does not include the number of untested materials with our supplier. The fault has been isolated to improper TLE2064IDR output.  Specifically, all materials failing our standard functional test have the following part marking:

TI 51CKJ6K

TLE2064I

I inspected other older materials and components with the following marking (among other markings) are not causing our functional test to fail:

TI 38C0KDT

TLE2064I

Could you please explain to me all the details portrayed by "51CKJ6K" and "38C0KDT"? It is important to me to understand the root cause of this sudden fallout centered around this TLE2064ID component

 

Although PCN#202311300041.1 states "No changes to form, fit, or function", Do you think the changes made to your Assembly location, Assembly process, Die, and Wafers in the PCN affects output offset or output stage drive shift? I am seeing a change of 400mV between the two components and all I can see is that the part marking is different and significant changes were recently made on the PCN around the same time we are noticing performance differences.

 

Thank you in advance for your response

  • 0
    Guru 327740 points

    The Revision History (section 9 of the datasheet) lists quite a lot of changes …

  • 0 in reply to Clemens Ladisch
    Prodigy 10 points

    The datasheet changes that correspond to the TLE2064I are:

    - Wide Bandwidth changed from 2MHz to 1.1MHz

    - Supply Current changed from 290uA/ch to 120uA/ch.

    The PCN shows additional changes to the TLE2064I

  • 0 in reply to Landon Oglesby
    TI__Expert 7890 points

    Hi Langdon,

    The revision history in the TLE2064 datasheet helps to describe the changes between the pre-PCN and post-PCN material.

    The functional failure, also known as an in-circuit test (ICT) failure, could be due to the updated ESD structures inside the op amp. Since the topology of the op amp has changed, the inherent resistance from the diode structure is also different. This can lead to false failures in a system level board test. Most diodes follow the same general IV curve, with a forward bias voltage around 0.7V for silicon diodes. However, all diodes vary and updating the ESD cells can change the IV curve characteristics enough to lead to the false failures you are seeing.

    Note that while the diode structure of a device can change, there is no change in the functional behavior of the device during normal operation. The protection structures are only triggered during abnormal device operation, such as an ESD event. For more information on ESD Cells in Op amps, please see this application note.

    Can you provide more details on your test setup and methodology to help determine the root cause of the failure? 

    Best regards,
    Carrie