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Inquiry regarding IOUT – Duty cycle characteristic on ULN2803A



Hello, all

Now we are considering to replace from Toshiba TD62083AFG to ULN2803A.

The datasheet of TD62083AFG is downloadable on the website below;

http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TD62083AFG&lang=en

I tried to find the some characteristics on IOUT on the datasheet of ULN2803A to compare, however I could not find out it.

Please let me ask you to disclose the characteristics below;

1) IOUT – Duty cycle

In case of TD62083AFG, this characteristic is disclosed on page 7 of its datasheet, we need to know how this would be on ULN2803A.

2) hFE – IOUT

In case of TD62083AFG, this is disclosed on page 8, we need to know how this would be as well.

We thank you in advance for your information.

Best regards,

  • Atsushi,

    These two devices are the same for all practical purposes. The Toshiba device just has more views of the same performance.

    I made de-rating curves for typical VOL performance. Here is "N" original DIP package (Ta = 85C)

     Here is "DW" wide SOIC package (Ta = 85C)

    Here is a beta plot I found.