This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

OPA835 leakage current over temperature

Other Parts Discussed in Thread: OPA835

Team,

we are looking to calculate leakage current of OPA835 at temperature of 60C or above. The data sheet states that the leakage current in shutdown mode is 1.5uA max but it is at 25C. Could you please share a formula or a table that shows increase in leakage current with increasing temperature ?/

The engineer estimated that the leakage current doubles for every 10C temperature rise, is that a correct assumption ?

Regards,

Dmitry

  • Hello Dmitry,
    The shutdown current will not increase by much over temperature.

    The leakage current that you are referring to (doubles every 10C) is the leakage current of a diode over temperature. This number comes up often when discussing the input bias current of a CMOS/JFET opamp. Since the inputs of these opamps are the gate of a CMOS/JFET device the bias current should be < 1 pA. However we put ESD diodes on the inputs of the opamp to protect them. These ESDs leak and so the resulting input bias current of the opamp will double every 10C in keeping with diode physics. This situation doesnt apply here where we have a BJT input stage amplifier. Also, we are referring to the quiescent current in shutdown mode.....not the input bias current. Hopefully this explanation makes things clear.

    -Samir
  • Hello Dmitry,
    I found some over temp data on the OPA835. At 125C the shutdown current is typically around 7uA. We don't guarantee a maximum here however it should be less than 20uA (conservative estimate).