We have 3 occurrences of this OpAmp failing in our Power Conversion application. To date we have shipped more than 300,000 units.
The results of TI's FA Analysis state "ESD/EOS damage to be the root cause" ( qts job # 436030-1 ). This statement has limited usefulness.
Would TI be willing to elaborate on the failure?
- Which pin on the LP324DR was over stressed? I've recently been told the damage is near pin 7.
- How much voltage on this pin would cause the same failure signature/damage (e.g. 33V, 50V 100V, 500V)?
- Anything else that would help us understand the excessive stresses this component experienced?
Our customer is demanding a true root cause and corrective action.
I can send schematics, but not willing to post on a public forum.
Regards,
Mark
