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LP324: LP324DR

Part Number: LP324

We have 3 occurrences of this OpAmp failing in our Power Conversion application. To date we have shipped more than 300,000 units.

The results of TI's FA Analysis state "ESD/EOS damage to be the root cause" ( qts job # 436030-1 ). This statement has limited usefulness.

Would TI be willing to elaborate on the failure?

  • Which pin on the LP324DR was over stressed?   I've recently been told the damage is near pin 7.
  • How much voltage on this pin would cause the same failure signature/damage (e.g. 33V, 50V 100V, 500V)?
  • Anything else that would help us understand the excessive stresses this component experienced?

Our customer is demanding a true root cause and corrective action.

I can send schematics, but not willing to post on a public forum.