Vio = 0.28 - 0.5 mV; 2.5uV/°C;
Iib = 2 - 10 pA;
Iio = 1 - 10 pA;
en = ~4.8nV/rtHz; ~20nV/rtHz@10Hz; ~80nV/rtHz@1Hz;
in = 2.5 fA/rtHz;
BUT with:
GBP = a few times more than 16MHz - let say 40MHz;
and slew rate more than 40 V/us - let say 100V/us.
Can you recomemnded for such device?
Iib = 2 - 20 pA;
Iio = 1 - 10 pA;
en = 7nV/rtHz, ~70nV/rtHz @10Hz.
in = 1.2 fA/rtHz;
Bonnie