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LMH6321: EF pin's leakage current and ATE condition

Part Number: LMH6321

Dear all,

In a previous post, a TI representative provided the following comment:
”It seems like the leakage current on the VEF pin is tested on the ATE with a range of +/- 23uA and has a typical value of 75pA.”
I would like to ask a question about the above contents.

① Could you tell us the conditions when measuring the above ATE results?
Is it acceptable for us to recognize that the same conditions as in the data sheet are used under the following conditions?

② When measuring with the above ATE, do you measure the distribution of variation? If so, is it possible to get the variation distribution?
③ Does the leakage current of this EF pin increase with aging?
If it changes over time, is it due to aging of the internal switch (FET) connected to the EF pin?

Best Regards,

Y.Ottey

  • Hi Y.Ottey,

    I don't think that aging is an issue here. But temperature rise could be an issue. Remember that the EF performance is specified with RL=infinite and Vin=0V. This in order to keep the die temperature at a minimum. But when the LMH6321 has to drive a load, the die temperature will rise. And as it's a well known fact that the collector emitter leakage current will exponentially rise with temperature, the leakage current through the EF transistor might also increase. So, it would be interesting to know what temperature the LMH6321 has during your measurement.

    Kai

  • Dear TI team

    I have been requested by our customers to reply soon.

    Therefore, I'd be happy if you could get a quick reply.

    Regards,

    Y.Ottey

  • Hello,

    1) Yes the ATE conditions are the same as those shown on the datasheet.

    2) Unfortunately, I do not have the data for the distribution of variation. The ATE is used to ensure that parts do not exceed the limits.

    3) Please refer to Kai's comment. Changes in leakage current are likely to be a cause of the temperature of the device rather from any aging.

    Best,

    Hasan Babiker