Other Parts Discussed in Thread: SN74AUC1G125, DS90LVRA2, SN74AVC1T45-Q1
Tool/software:
I need to translate 200 MHz LVDS clock and associated DDR data to single ended 1.2 V CMOS signals for input to a 1.2 V FPGA bank. SN65LVDS4 does most of this but the output is still too high at 1.8 V.
I have considered a level translator, but am concerned about propagation delay, rise time device-device skew etc.
I have used an IBIS model to simulate the SN65LVDS4 with a resistive divider on the output to reduce the 1.8 V to 1.2 V. This uses resistors 75 Ohm and 150 Ohm from the output to 0V and connects the centre point to the FPGA input. The values conveniently look like around 50 Ohm looking back into the driver-divider circuit. The model works and the signal looks clean with 1.2V output high level.
I am concerned that the current drawn from the output of the SN65LVDS4 will be 8 mA (1.8V/125 Ohm). The datasheet Absolute maximum specification for receiver output current (Io) is +/-12 mA, however Figure 1 of the data sheet for 'High-level output voltage versus High-level output current' cuts off at 4 mA for VCC = 1.8V even though it shows the combination of VCC=2.5V at 8 mA.
1. What is the recommended maximum output current value for VCC = 1.8V?
2. The data sheet features section says 'Designed for Signaling Rates up to 500 Mbps Receiver', Section 6.3 'Recommended Operating Conditions' lists Operating frequency 10 -250 MHz. Will DDR data be too fast for this with a 200 MHz clock?
3. What does 10 MHz mean as a minimum recommended operating frequency? Will unchanging data be an issue?
Thanks for your assistance.