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Original question:

TCAN1462-Q1: Common mode choke coil

TCAN1462-Q1: Difference of these device ESD characteristic between TCAN1462-Q1 and SN65HVD1050-Q1

teritama
Expert 2165 points
Part Number: TCAN1462-Q1
Other Parts Discussed in Thread: SN65HVD1050-Q1, , ESD2CAN24

Tool/software:

Hi team,

Our customer performed ESD test on they designed board in case of using TCAN1462-Q1 and using SN65HVD1050-Q1. In the results, when using SN65HVD1050-Q1, the board is correct operation. However, when using TCAN1462-Q1, they obtained CAN communication error on the same board.

The difference of circuit is only using TCAN1462-Q1 or SN65HVD1050-Q1.

The customer guess this difference is from difference of these device ESD characteristic.

In datasheet, TCAN1462-Q1 is said "EMC performance: supports SAE J2962-2 and IEC 62228-3 (up to 500 kbps) without common mode choke". And SN65HVD1050-Q1 is said "EMC-OPTIMIZE" and "• Low Electromagnetic Emissions (EME)". So I think each device have its own circuit for EMC(EMS) measures.

Could you teach about EMC measures of these device?

Especialy, about SN65HVD1050-Q1, the customer interested in the mean of "EMC-OPTIMIZE".

Best regards,

teritama

  • 0
    TI__Guru 50446 points

    Hi Teritama,

    The SN65 device is an older device supporting lower data rates. With lower speeds, we can observe lower emissions. Hence, the device was designed and optimized for emissions. The TCAN device is newer, supporting higher data rates with stronger edge rates but still passes emission tests. See reports here.

    Note that they both have different ESD ratings if issue is more related to ESD rather than EMI. I.e., the SN65 is known for strong ESD clamping behavior and transient suppression which can help recover better from ESD strikes. If ESD related, ESD2CAN24 could be included and If EMI related, compare results with CMC for the higher data rates.

    You may share ESD test waveforms to see how each device reacts. You may further share CANH, CANL, TXD, RXD waveforms similar to this referenced note, to help clarify the differences in CAN communication for the observed error, thanks.

    Best Regards,

    Michael.

  • 0 in reply to Michael Ikwuyum
    Expert 2165 points

    Hi Michael-san,

    Thank you for reply. Sorry I can't access the reports you attached. Could you check the link is correct?

    >the SN65 is known for strong ESD clamping behavior and transient suppression which can help recover better from ESD strikes.

    ⇒This means ESD characteristic of SN65 is better than TCAN device? From datasheet, ESD characteristic(CDM) of SN65 is higher than TCAN like below.

                                                                                                  SN65

                                                                                                  TCAN

    The reason of strong ESD clamping behavior is from above characteristic. Is this understanding correct?

    If you have any infomation, could you teach the reason of these difference is from what circuit structure?

    >The SN65 device is an older device supporting lower data rates. With lower speeds, we can observe lower emissions. Hence, the device was designed and optimized for emissions.

    ⇒I understood EMC-optimized of SN65 device is for low speed comunication(around 1Mbps?).

    Best regards,

    teritama 

  • 0 in reply to teritama
    TI__Guru 50446 points

    Hi Teritama,

    teritama said:
    Thank you for reply. Sorry I can't access the reports you attached. Could you check the link is correct?

    See: https://e2e.ti.com/support/interface-group/interface---internal/f/interface---internal-forum/1391679/faq-tcan1044a-q1-can-lin-and-sbc-emc-and-compliance-reports?tisearch=e2e-sitesearch&keymatch=faq%253Atrue%2520emc%2520compliance 

    teritama said:
    The reason of strong ESD clamping behavior is from above characteristic. Is this understanding correct?

    You may also compare ESD transients I.e. 200 V vs 30 V.

    teritama said:
    I understood EMC-optimized of SN65 device is for low speed comunication(around 1Mbps?)

    Yes, you are correct per the data sheet's recommendation, thanks.

    Best Regards,

    Michael

  • 0 in reply to Michael Ikwuyum
    Expert 2165 points

    Hi Michael-san,

    I can't access this one either. I can see below message only.

    Michael Ikwuyum said:
    You may also compare ESD transients I.e. 200 V vs 30 V.

    ⇒Is ESD transient characteristic below value on Machine model and Vtran by DCC slow transient pulse?

    Michael Ikwuyum said:
    Yes, you are correct per the data sheet's recommendation, thanks.

    ⇒I see. Thanks.

    Best regards,

    teritama

  • +1 in reply to teritama
    TI__Guru 50446 points

    Hi Teritama-San,

    teritama said:
    I can't access this one either. I can see below message only.

    I would recommend reaching out to your regional TI representative to help access and provide reports for you.

    teritama said:
    Is ESD transient characteristic below value on Machine model and Vtran by DCC slow transient pulse?

    I was comparing the below from the SN65 device of 200 V transient pulse to that of the TCAN device for 30 V, thanks.

    Best Regards,

    Michael.

  • 0 in reply to Michael Ikwuyum
    Expert 2165 points

    Hi Michael-san,

    Thank you for your kindly supports.

    I understand your unswer. 

    Best regards,

    teritama