Hello Team,
My industrial customer is looking at competition part of Si8283 that is competing with TI device of the ISO5852S.
1. Propagation Delay, ISO5852S: 110nS,max @ 1000pF, Si828x: 50nS,max @ 200pF. Can you offer the propagation delay of the ISO5852S with 200pF? So that it can be apple-to-apple comparison.
2. Is there any ref. design of ISO5852S with GaN/SiC application? For such new tech., with ISO5852S, how to do the current protection with DESAT pin? Is there any design difference comparing with tranditional FET? Can GaN FET be designed with ISO5852S?
Regards,
Brian
