Other Parts Discussed in Thread: ISO7721, ISO7821
We have several customers in the instrumentation and medical space that require isolation to relatively high WORKING voltages, such a >5 kV.
One approach to this has been to "stack" two isolation boundaries such that there is an intermediate region between them. The thought being that the total working voltage is the sum of the working voltages of the isolation boundaries on either side of the intermediate region.
I see a problem with this- the common mode voltage potential of the intermediate region doesn't seem to be defined- in order to avoid stressing either boundary, it seems like the intermediate region needs to be actively driven (defined) to a common voltage potential half-way between the adjacent regions. Due to board layout or EMI issues, without some circuit to set the potential of the intermediate region, one of the isolation boundary could get over-stressed, fail short, and then cause a cascading failure of the secondary isolation boundary and a complete isolation failure.
What is the right way to stack isolation layers to achieve working voltages above that achieved with a single layer? How do we drive the intermediate region properly to avoid stress? What about CMTI in this situation?
Please point us to whatever useful resources you might have on this matter; we have several customers asking this and this issue comes up alot.