OPA2333-HT: Package decapsulation method

Hello Ian
The OPA2333HD is an standard SOIC package and there is nothing unusual about the die. Typically these can be decapsulated with a Jet Etcher, Laser Etching, and/or Reactive Ion Etching / Plasma Etching.

Kirby

Hello Kirby,

The test house has been using a jet etcher, initially with hot acid but also with cold acid with similar results, both on new unused ICs. Between the wire bond and the pad there is an intermediate pad that gets "washed away" in the etching process. It is also not clear how this intermediate pad bonds to the main pad. We assume that this arrangement is due to the 175C rating of the IC. Can you advise ASAP so that we can get on with decapsulation of the failed part. Thanks.

Image 1a shows pad with intermediate pad missing

Image 1b shows pad with intermediate pad present

Neither have continuity remaining to lower pad

IanL-decap1ca.tifIanL-decap1b.tif

See reply below

Ian,
thanks for the picture. That was really helpful.

That is correct, there is a cap on the bond pad for high temp operation.

We have forwarded your question to our f/a group and are waiting on an answer.