Dear TI Experts,
in a cost sensitive product there is a 3V3 sensor providing digital signal for a 5V uC, I would like to translate voltage levels with an open drain buffer SN74LVC3G07-Q1:
To calculate the Rp value I would like to ask about the SN74LVC3G07-Q1 output ESD protection structure - here sketched as D1 and D2.
1. Is there ESD Diode like D1 in the SN74LVC3G07-Q1 buffer?
2. Is the D1 behaving like a regular silicon diode with ~0,7V voltage drop or is it a structure which starts conducting at higher voltage?
2. Will there be current flow from 5V through the Rp, D1 to the 3V3 rail? (see yellow highlighted path)
