This thread has been locked.
If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.
Dear TI Experts,
in a cost sensitive product there is a 3V3 sensor providing digital signal for a 5V uC, I would like to translate voltage levels with an open drain buffer SN74LVC3G07-Q1:
To calculate the Rp value I would like to ask about the SN74LVC3G07-Q1 output ESD protection structure - here sketched as D1 and D2.
1. Is there ESD Diode like D1 in the SN74LVC3G07-Q1 buffer?
2. Is the D1 behaving like a regular silicon diode with ~0,7V voltage drop or is it a structure which starts conducting at higher voltage?
2. Will there be current flow from 5V through the Rp, D1 to the 3V3 rail? (see yellow highlighted path)
There is no D1. The output is overvoltage tolerant (see the recommended operating conditions). The output's leakage current is the same as Ioff.