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Tool/software:
I am using SDK8.3.0 .
when i use the complier TIClang and DDR config is as below.DDR works fine.
.isCacheable = 1
.isSharable = 0
.enableForceWrThru=0
When i change the complier to ARMDS.With the same DDR config,the read and write of DDR became abnormal.
case 1.Write/Read 32byte to/from DDR address 0x80000000 OK
case 2.Write/Read 32byte to/from DDR address 0x80000010 NG
Write: Only 16 bytes of data were written between addresses 0x80000010 and 0x80000020
Read: The program crashed in the Func HwiP_data_abort_handler() function
When i change the .enableForceWrThru from 1 to 0,the test in case 2 worked normally.
case 2.Write/Read 32byte to/from DDR address 0x80000010 NG→OK
Can you give some advice about How the enableForceWrThru configuration affects the use of DDR.
Hi ,
Thanks for your query.
Can you give some advice about How the enableForceWrThru configuration affects the use of DDR.
I have never used ARMDS compiler to generate binary. You will need to compare the assembly instructions generated through ARMDS and TI Compiler.
The supported compiler for MCU+SDK are listed in the release notes. Please refer RELEASE_NOTES_08_03_00.
Regards,
Tushar