TMS570LC4357: The issue regarding TMS570LC4357,Flash bank7 read and write

Prasanna Naik

I am facing an issue while writing to Bank 7 of the F021 Flash on the TMS570LC4357 device and would like your support in understanding the behavior. I am programming data to specific addresses in Bank 7 using the F021 Flash API. During the first programming cycle, the data is written correctly and the Flash contents reflect the expected values. However, during the second programming cycle, when I attempt to rewrite the same addresses after performing a Flash erase, the updated data is not reflected in Flash memory.What is confusing is that during the second cycle all the Flash API calls, including the erase and programming commands, return Fapi_Status_Success,

2 months ago

0 jagadish gundavarapu 2 months ago

TI__Guru* 75446 points

Hi Prasanna,

I already attached some tested examples in below e2e, so please go through them once:

(+) [FAQ] TMS570LC4357: Examples and Demos for Hercules Controllers (E.g. TMS570x, RM57x and RM46x etc) - Arm-based microcontrollers forum - Arm-based microcontrollers - TI E2E support forums

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Thanks & regards,
Jagadish.

0 Prasanna Naik 2 months ago in reply to jagadish gundavarapu

Prodigy 80 points

I would like to clarify the erase granularity supported by the F021 Flash on the TMS570LC4357 device. From my understanding and current implementation, the Flash architecture supports only sector-level and bank-level erase operations, and there does not appear to be any provision for word-level or phrase-level erase. In my application, multiple parameters are stored within a single sector of Bank 7. When there is a need to update only one parameter, it seems that the entire sector must be erased and all parameters rewritten, even if the remaining parameters have not changed. I would like to confirm whether this behavior is an inherent limitation of the Flash hardware and F021 API, or if there is any alternative mechanism available to update individual parameters without performing a full sector erase.

0 jagadish gundavarapu 2 months ago in reply to Prasanna Naik

TI__Guru* 75446 points

Hi Prasanna,

Prasanna Naik said:
From my understanding and current implementation, the Flash architecture supports only sector-level and bank-level erase operations, and there does not appear to be any provision for word-level or phrase-level erase

Not just this flash, most of the flash memories will support ease granularity of sector only. We can't do byte by byte erasing in flash memories.

I think using EEPROM we can do that.

However, we have FEE module, means Flash Emulated EEPROM. I mean here we emulated flash as EEPROM. That means you can do byte by byte rewriting also without doing complete sector erase.

For more details regarding its operation, please refer below file:
2570.TI FEE User Guide.pdf

And examples related this can be found here:

(+) [FAQ] TMS570LC4357: Examples and Demos for Hercules Controllers (E.g. TMS570x, RM57x and RM46x etc) - Arm-based microcontrollers forum - Arm-based microcontrollers - TI E2E support forums

Maybe this will be useful to implement your requirement. Please go through it and verify it.

Thanks & regards,
Jagadish.

0 Prasanna Naik 2 months ago in reply to Prasanna Naik

Prodigy 80 points

Thank You for the information.