MSP430F5229: Question regarding EEPROM emulation implementation and wear leveling

I am interested in trying to use the MSP430F5229 for EEPROM emulation to store some data which the application will update periodically during runtime. I know from some worst case estimates that portions of the data may be updated and changed as frequently as once per minute. Additionally, the total amount of data which will need to be saved and treated like EEPROM exceeds the size of one of the INFOMEM segments on this MSP430 (128bytes).

My first thought was to try to use all 4 of the INFOMEM segments, and each time one of the segments filled up and a value needed to be updated I would copy it to one of the other segments with the updated values and then erase the previous segment, but I am not convinced that doing so would be feasible with the amount of data we will have and the frequency of some of the data changes while still maintaining a reasonable lifetime for the product (~10 years). I am aware that I could (and would likely need to) allocate other flash segments to be used for this data instead of the INFOMEM as a way to reduce how frequently the segments will need to be erased, thus increase the lifetime of the product.

Previously I have used MCUs from Renesas which have data flash segments and Renesas provides some tools for implementing EEPROM emulation in those segments. Does TI provide any tools for assisting implementing EEPROM emulation and managing wear leveling on the MSP430s, aside from switching to one of the MCUs in the MSP430 FRAM family? Or is the only solution to define our own wear leveling algorithms and EEPROM implementation to use with the MSP430?