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MSP430F1232: EEPROM Endurance for high electro-maganetic field

Part Number: MSP430F1232

We are using MPS430 for RFID reader controller.

Could you let me know whether the EEPROM is affected (garble of the read data)

in the high electro-magnetic field?

 

Best regards,

 

N.O.

  • Hello N.O.

    The MSP430F1232 does not have EEPROM, but has internal FLASH memory. The specifications for which are in the datasheet of the device.
  • Hello JH,

    Oh ! it was my mistake, it was internal Flash Memory.

    Could you give me your comment of the endurance of the Flash Memory in the high electro-magnatic field?

    N.O.

  • Hello N.A.,

    Flash memory inherently is susceptible to strong e-mag fields. Some of this can be mitigated with HW design and some products are hardened against this by changing packaging types, or adding protections in this way. The standard MSP430F1232 does not have this protection. I'm also not aware of its base level resistance unless it is discussed in the datasheet or the following documents. www.ti.com/lit/slaa392 www.ti.com/lit/slaa334 .

    If you are really concerned about EMI, have you considered some of our EP or HiREL products? Some of our offerings in that space can be found here. www.ti.com/.../overview.page

    In addition if your main concern is EMI, have you considered some of our FRAM products? FRAM technology has an inherent resistance to EMI. you can find more information about this at the following links.
    www.ti.com/.../what_is_fram.page
    http://www.ti.com/lit/slaa526

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