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Tool/software: Code Composer Studio
Hello,
I am using MSP430FR5969 device.
I tested FRAM and SRAM write latency with FRAM speed application which TI provides.
I just changed the FRAM_WRITE_START address to SRAM region to measure SRAM write speed.
I attached the picture below.
But the weird thing was energy consumption was different but the latency was almost the same.
I thought FRAM should have about 3 times slower than SRAM.
(I measured latency with energy trace. I made the led toggle after finish writing then the power goes high when it finishes writing)
Does anybody have clue about this result?
Or does anybody have documents about SARM and FRAM write speed?
Best,
Mirae
DMA for Flash to RAM or RAM to RAM will take 2 cycles foreach word (on any MCLK for non FRAM devices), for example if you are coping data from Flash to RAM, or from input port to RAM. If there is no waiting states for FRAM (MCLK <= 8 MHz), with the same MCLK, number of cycles should be the same.
it is explained here...
http://www.ti.com/lit/an/slaa498b/slaa498b.pdf
If you want to check RAM, make RAM to RAM DMA and everything should be clear.
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