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Dear expert,
Is it possible to put Reverse Polarity Protection circuit at Low side when DRV8718 is used for H bridge? Low side FET is NMOS.
Below is two solution. The difference is how to connect GND. Which one is acceptable?
Solution 1:
Solution 2:
Hi Ryan,
Solution 2 is better. We would like to keep GND layout as usual including power pad, power gnd, analog and digital gnd. Please keep all grounds are same level. Based on this point, VBAT side might be better to put reverse protection.
Here is application note:
DRV8718-Q1 EVM has reverse protection example. It is located on VBAT side.
Does customer have the reason to put protection on GND side?
regards
Shinya Morita
Shinya,
Great thanks.
I will back to you for below question later.
"Does customer have the reason to put protection on GND side?"