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For the Low-side gate drive high level voltage (VGLX_HI): what does this parameter mean? Is it the Gate to source voltage that is driving the external FETs?
VGLX_HI means that when the IGHx gate output current is sourcing 100mA, then the gate-to-source voltage of the high-side MOSFET gate is anywhere from 0.3V to 1.2V below BSTx = 12V.
It's a little confusing at first glance, but this describes the voltage drop across the internal Rdson of the high-side predriver FET since Rdson changes with current and temperature flowing through the internal predriver FET, so the voltage range will fluctuate as the gate charges.
