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TPS65295: TPS65295

Part Number: TPS65295

Hi :

am using TPS65295 IC for our DDR4 power solution.

I would like to vary the VDDQ supply +/-3% (1.2V +/-3%)  to characterize the DDR4 controller performance at corner voltage scenario.

Is there a way to change this beyond the typical limit of 1.2V ?

best regards
Shamanth

  • I would like to use above  concept at VDDQ output path.                                                                                                                                                                                                VDDQSNS connected to VDDQ rail through a Resistor R , current source (DAC) connected to another end of Resistor  . VDDQSENS voltage always maintained at 1.2V  at closed loop scenario but output voltage VDDQ changed according to current and Resistance combination

  • But it is not working with TPS65295 Spice model 

  • Hi Shetty

    The voltage of VDDQ can be increased through adding a resistor(R1) between VDDQ pin and VDDQSNS pin. VDDQSNS input current is 40uA according to datasheet, and the variation of VDDQSNS input current is -17%, +20%.  VDDQ =1.2+R1*40uA.

  • Hello Zhang : Thanks for the information

    I have Pspice simulation and attached the schematic and result

    With this schematic configuration the VDDQ voltage increase to 1.298V( 98mV more than 1.2V)

    The VTT and VTTRef  = VDDQ/2  ---> ~649mV

    But as per the datasheet VTT and VTTRef  = VDDQSense/2 

    Please clarify ??

    thanks and regards

    Shamanth

  • Hi Shamanth,

     As the datasheet 7.1 Overview shown, VTTREF tracks VDDQ/2, and VTT tracks the VTTREF. 

    In Electrical Characteristics table, VTTREF = VDDQSense/2, which applies for typical application below.

  • Hello : As per simulation shared above it is tracking VDDQ . But we got the EVK of this and tested in the lab. The VTT and VTTREF is following VDDQSENS

    Please clarify - Is anything wrong with the spice model 

  • Hi : I tried to understand VTTREF is tracking VDDQSENSE or VDDQ . Please clarify ? Measurement result in the lab and simulation result Pspice are providing different result . 

  • Hello : 

    Please refer to my schematics

    •          Added 1kohm resistor b/w VDDQ and VDDQSNS
    •          Applied current source from VDDQSNS to ground

    Pspice simulation : 

            VTTRef  and VTT is tracking 1/2*VDDQ

    Lab Measurement using TPS65295 EVK with same schematic changes as mentioned in the  Pspice sim setup

            VTTRef  and VTT is tracking 1/2*VDDQSNS

    Unable find out why there is a difference b/w Lab measurement and Pspice simulation result ?                              Also which result is correct

    thanks,

    Shamanth

  • Hi Shamanth

    please see the 7.2 Functional Block Diagram of datasheet, exactly, the VTTREF is tracking VDDQSENSE. why do you add the I1?  you can remove the I1 and try again.

  • Hello Zhang : The current source I1 added to vary the VDDQ voltage ( 1.2V +/- 10%) . I am able to find the expected result in both simulation and lab measurement. But lab measurement and simulation result are not matching for VTTREF and VTT

  • Hello Shamanth,

    As your experiment turned out, we are also a little confused. We'll go to the lab to replicate this problem and discuss it with Design Team to see what went wrong.  

  • Okay. thanks . Waiting for your reply

  • Hi Shamanth,

    Due to impact of the pandemic, we can't get back to you right now. If there is a conclusion, we will reply you as soon as possible.

  • Hi Shamanth

    I have confirmed that the VTTREF is tracking VDDQSENSE and your lab results is correct. I not sure if the Pspice have some bugs. For example, we all know that the VDDQ=VDDQSNS by default on most typical applications, whether the incorrect internal setting that VTTREF = 1/2*VDDQ occurs, Recommend removing I1 first and checking again if the VTTREF is still equal to 1/2*VDDQ, because I'm not sure if the current of I1 will affect VDDQSNS.