BQ34Z110: bq34z110PWR Write Data Flash Process

NUR IMAN ADLI MOHD AZIZAN

Prodigy 90 points

Part Number: BQ34Z110
Other Parts Discussed in Thread: BQ34Z100, BQSTUDIO

Hi,

What are the correct steps to update/change the value in the data flash for BQ34Z110 IC?

For example, we are changing the value of Design Capacity from 4000 to 16000 (mAh). The way we are doing right now:

1. unseal

2. read data block

3. change register and write it back

4. checksum

5. read data block to confirm change

We have been referring to the library from Github. For this specific task, we use this line of code.

The problem is the library was for BQ34Z100 and we are using BQ34Z110. And until now we still can't manage to change the value on the data flash but were able to read from the data flash.

Is there anything we should have done differently for the BQ34Z110? Is there any difference in the process to write the flash data between BQ34Z100 and BQ34Z110?

over 1 year ago

0 Shirish over 1 year ago

TI__Guru 57747 points

Hello Nur,

The process is the same for both. The block sizes and offset are likely to be different. The TRM has an example sequence for reference.

0 NUR IMAN ADLI MOHD AZIZAN over 1 year ago in reply to Shirish

Prodigy 90 points

Hi Shirish,

I do exactly as in document SLUA790 pg.8 (code below). But still unable to write to the flash. Is there any problem with my code?

Aside from the code, is the IC needed to be in Normal mode for the writing process to execute?

Because, I checked the CONTROL_STATUS and the bit for SLEEP mode was set to 1, which means the IC is in Sleep mode.

Do I need to set the IC to Normal mode first before I can write something to the IC?

/* To write 16000 to the Design Capacity on the data flash replacing the
default value 4000*/
uint8_t subclass = 48; //or 0x30
uint8_t offset = 21; //or 0x15
uint16_t value = 16000;

const uint8_t BQ34Z110_ADDRESS = 0x55;
uint8_t flash_block_data[32] = {0};


  /*
  Unsealed
  */
  Wire.beginTransmission(BQ34Z110_ADDRESS);
  Wire.write(0x00);
  Wire.write(0x14);
  Wire.write(0x04);
  Wire.endTransmission();
  
  Wire.beginTransmission(BQ34Z110_ADDRESS);
  Wire.write(0x00);
  Wire.write(0x72);
  Wire.write(0x36);
  Wire.endTransmission();

  delay(4000); // mandatory wait time after unseal

  /*
  Reading the data flash
  */
  Wire.beginTransmission(BQ34Z110_ADDRESS);
  Wire.write(0x61); // BlockDataControl()
  Wire.write(0x00);
  Wire.endTransmission();

  Wire.beginTransmission(BQ34Z110_ADDRESS);
  Wire.write(0x3e); // DataFlashClass()
  Wire.write(subclass); // Subclass 48 = 0x30
  Wire.endTransmission();

  Wire.beginTransmission(BQ34Z110_ADDRESS);
  Wire.write(0x3f); // DataFlashBlock()
  Wire.write(offset / 32); // 21/32 = 0x00
  Wire.endTransmission();
  
  Wire.beginTransmission(BQ34Z110_ADDRESS);
  Wire.write(0x40); // BlockData()
  Wire.endTransmission();
  Wire.requestFrom(BQ34Z110_ADDRESS, 32, true);
  Wire.readBytes(flash_block_data, 32); // read 32 bytes

  /*
  Checksum
  */
  Wire.beginTransmission(BQ34Z110_ADDRESS);
  Wire.write(0x60); // BlockDataCheckSum()
  Wire.write(0x00);
  Wire.endTransmission();

  /*
  Update block data
  */
  flash_block_data[offset] = value >> 8;
  flash_block_data[offset + 1] = value & 0xff;

  /*
  Writing the data flash 
  */
  Wire.beginTransmission(BQ34Z110_ADDRESS);
  Wire.write(0x3e); // DataFlashClass()
  Wire.write(subclass); // Subclass 48 = 0x30
  Wire.endTransmission();

  Wire.beginTransmission(BQ34Z110_ADDRESS);
  Wire.write(0x3f); // DataFlashBlock()
  Wire.write(offset / 32); // 21/32 = 0x00
  Wire.endTransmission();

  Wire.beginTransmission(BQ34Z110_ADDRESS);
  Wire.write(0x40); //BlockData()
  Wire.write(flash_block_data, 32); // write 32 bytes
  Wire.endTransmission();

  /*
  Checksum
  */
  uint8_t chksum = flash_block_checksum();
  uint8_t chksum2 = flash_block_checksum_2();

  Wire.beginTransmission(BQ34Z110_ADDRESS);
  Wire.write(0x60); // BlockDataCheckSum()
  Wire.write(chksum);
  Wire.endTransmission();

  delay(5000);

  /*
  Reading the data flash
  */
  Wire.beginTransmission(BQ34Z110_ADDRESS);
  Wire.write(0x61); // BlockDataControl()
  Wire.write(0x00);
  Wire.endTransmission();

  Wire.beginTransmission(BQ34Z110_ADDRESS);
  Wire.write(0x3e); // DataFlashClass()
  Wire.write(subclass); // Subclass 48 = 0x30
  Wire.endTransmission();

  Wire.beginTransmission(BQ34Z110_ADDRESS);
  Wire.write(0x3f); // DataFlashBlock()
  Wire.write(offset / 32); // 21/32 = 0x00
  Wire.endTransmission();
  
  Wire.beginTransmission(BQ34Z110_ADDRESS);
  Wire.write(0x40); // BlockData()
  Wire.endTransmission();
  Wire.requestFrom(BQ34Z110_ADDRESS, 32, true);
  Wire.readBytes(flash_block_data, 32); // read 32 bytes


  Serial.println("Read Data Flash New");
  for (int i = 0; i < 32; i++)
  {
    Serial.printf("%02i. 0x%02x\r\n", i, flash_block_data[i]);
  }

0 Shirish over 1 year ago in reply to NUR IMAN ADLI MOHD AZIZAN

TI__Guru 57747 points

Hello Nur,

The code for each micro can behave differently due to differences in implementation

. I would recommend that you use bqStudio. Turn off dashboard refresh and then use Advanced comm tab to perform the steps. You can then monitor the bus and compare with your implementation.

Power management

Power management forum

BQ34Z110: bq34z110PWR Write Data Flash Process