Dear TI,
In case of high frequency switching regulators the switching loss become more important. The datasheet does not contain too much info in this topic, could you please give detailed parameters? Dead times, the switching MOSFET parameters (rise-, fall times, Coss, etc), body diodes (forward voltage, reverse recovery charge) and the effect of Rboot resistor. Is there any formula how the high side rise time can be calculated depending on the Rboot resistor?
