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LMG3522R030: Parameters and suggestion on replacing competitor device

Part Number: LMG3522R030
Other Parts Discussed in Thread: LMG3410R070, LMG3410R150, LMG3410R050

Hi team,

My customer is looking for a GaN solution and currently looking at competitor device TK12A60W.

I promoted LMG3522R030 to the customer but had trouble find following parameters to compare with competitor device, could anyone help filling the table below?

TK12A60W LMG3522R030
FoM 7.5  
Qgs 25nC  

I also feel LMG3522R030 would be over kill for the customer application which only requires less than 11A Ids, is there any suggestion on this?

Regards,

  • Hi David,

    Are they using the TK12A60W FETs in parallel? 

    For this application I would suggest looking at LMG3410R050, LMG3410R070, or LMG3410R150. These are 600V GaN FETs with integrated driver, they are 50mΩ, 70mΩ, and 150mΩ. Since the TK12A60W has a Rdson of 265mΩ you may be able to replace multiple TK12A60W with a single LMG3410Rxxx device.