LM5170-Q1: LM5170 with external gate driver

Hi Ilan,

You may refer to https://e2e.ti.com/support/power-management-group/power-management/f/power-management-forum/1000376/lm5170-q1-lm5170-q1-external-gate-driver-ucc27712dr for external gate driver.

You should use GaN or SiC FET as high voltage Si FET has a bad body diode.

We know little about your system and cannot give any suggestions about isolation.

Best Regards,

Feng Ji

Hi Feng Ji,

i want to make modification to the demo board : https://www.ti.com/tool/PMP21943.

the goal is to implement 

•  Input voltage 40VDC t0 250VDC.
• Output voltage 31VDC.
• Output power 1500watt.

PLS advise. 

Thank You 

Ilan mazuz

Hi Ilan,

I believe you have to use GaN or SiC due to the limitation of Si.

 It will be difficult to replace the Si MOS in PMP21943 directly with GaN or SiC because of the different gate requirements.

Best Regards,

Feng Ji

Hi Feng,

if the input voltage MAX is 165VDC.

• Input voltage 40VDC t0 165VDC.
• Output voltage 31VDC.
• Output power 1500watt.

i want to make modification to the demo board : https://www.ti.com/tool/PMP21943 without change the gate drivers

PLS advise. 

Thank You 

Hi Ilan,

We'll get back to you with some feedback.

Thank you and best regards,
Bryan 

Hi Ilan,

This is a big change. You can ask help from loacl FAE.

Best Regards,

Feng Ji