Other Parts Discussed in Thread: BQ78350-R1A
Tool/software:
We are using bq76940+bq78350-R1A with 10 series lithium-ion batteries.
An issue occurred where the CHG-FET broken due to charging overcurrent protection.
The cause was that the total gate capacity was large because the CHG-FET was used in a 3-parallel configuration for high current specifications, and it took a long time to turn off the CHG-FET.
The resistance value of R1 and R2 on the CHG line in the recommended circuit (Figure 8-2) in "8.3.1.3.1 FET Driving (CHG AND DSG)" on page 23 of the specifications is nominally 1MΩ, but I confirmed that the speed at which the FET is turned off can be increased by lowering the resistance value.
There are some things I would like to confirm when changing the resistance value.
・Is it okay to reduce the resistance value like this?
・Are there any restrictions on the resistance value?
・Are there any points to be careful of when changing it?
Could you please advise me?
Best regards,
Yuji.S
