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CSD13381F4: What TI NMOS has the lowest IDSS and comes in a hand-solderable package?

Falk Alicke
Prodigy 170 points
Part Number: CSD13381F4
Other Parts Discussed in Thread: CSD13380F3

Tool/software:

I need a NMOS FET (VDS>9V) with a very low IDSS at high temperatures (e.g. 85C). The CSD13381F4 seems to be among the best TI devices for this parameter but no characterization graph is shown for IDSS over temperature. What TI FET would be the best to look at? Also, I would prefer if the device can be soldered by hand. The Picostar package would not be preferred for that reason. Thank you!

  • 0
    TI__Expert 7235 points

    Falk,

    Thanks for considering our devices.

    Unfortunately these series of devices in the picostar are the only ones that have such low leakages in the datasheet. Other traditional plastic packages will have the 100nA IGss, 1uA Idss type specifications in the datasheet.

    We may have a solution though, knowing these devices are not the easiest to handle we did a EVM with a variety of different parts already mounted to a daughter card here: https://www.ti.com/tool/CSD1FNCHEVM-889#tech-docs

    Although the CSD13381F4 is not on this EVM, the CSD13380F3 is, it is smaller and lower resistance vs the CSD13881F4 and even lower leakage with 50nA for Idss and 25nA for Igss.

    As for characteristics over temperature, we have an application note on the web with all MOSFET technical content here: https://www.ti.com/lit/an/slvafg3f/slvafg3f.pdf , in it are a couple of articles that you may find useful to read, these are:

    1. Section 4 Technical Articles: What type of ESD protection does your MOSFET include? 
    2. Section 4 Technical Articles: What’s Not in the Power MOSFET Data Sheet, Part 1: Temperature Dependency
    3. Section 4 Technical Articles: What’s Not in the Power MOSFET Data Sheet, Part 2: Voltage Dependency

    Thanks

    Chris

  • 0 in reply to Chris Bull
    Prodigy 170 points

    Thank you Chris for your thorough response. In Fig 4 of article "What’s Not in the Power MOSFET Data Sheet, Part 1: Temperature Dependency" the author provides IDSS plots over temperature but leaves the unit measure out. Are those nA? Thanks again. ~Falk

  • +1 in reply to Falk Alicke
    TI__Expert 7235 points

    Falk,

    As each device is slightly different we did normalized curves, so you can simply multiply the number in the Y axis to get an idea of what the leakage would be at your temperature. As such in Fig 4 you would see about a 70x increase in Idss from 25degC to 85degC. This is the same with all FETs form every manufacturer, it is based on device physics.

    This is not a guarantee but gives you an indication and the FETs all tend to behave similarly.

    In reality the Idss @ 25degC is normally <50nA not the 100nA datasheet limit, so  @ 85degC the leakage will normally be ~<50nA *70 = <3.5uA.

    Characterization data @ 80% of max BVdss showed a max of <10nA  @ 25degC. Also if your voltage across the device is <80%of MAx BVdss then this will reduce the leakage somewhat also, this is in the voltage dependent app note I mentioned above.

    We can not guarantee numbers in this area and are for reference only.

    Thanks

    Chris

  • 0 in reply to Chris Bull
    Prodigy 170 points

    Thanks Chris. I understand that this performance parameters cannot be guaranteed. It would be nice though if the BU considered adding a typical graph of IDSS over temperature to the datasheets. In battery operated systems this is a really important aspect for consideration. I realize none of TI's competitor publish these data either ... so this could be a differentiator. have a great week. ~Falk