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Tool/software:
To whom it may concern -
Per the datasheet, it states if we want to use the internal resistance for discharge of VOUT, we can short QOD to VOUT. With a 100 ohm resistance, what is the power rating on that internal resistance?
Thanks,
Brendan
Hello Brendan,
Internal resistance is basically the RDSon of the FET between QOD and GND as shown below
It's voltage rating is same as device rating .
Thanks
Amrit
Hi Amrit,
Thanks for the response. However, I'm actually looking for power rating. For example, if i was to sink enough current to see 50mW on the RDson of the FET, will that damage the FET?
Best,
Brendan
if i was to sink enough current to see 50mW on the RDson of the FET, will that damage the FET?
FET will not be damaged if it's for short time.
Hello Brendan,
Can you tell your requirement? so I can check if it's suitable for your application.
Thanks
Amrit
Hi Amrit,
I went back and checked my worst case condition and it would be discharging 3.3V rail. If the internal 100 ohm discharges the output, I calculated about 118mW of peak power. If this is too much power on the part, I would need to provide an external resistor to accommodate for this discharge power. There is no discharge time requirement, so I'm okay with any value at that point.
Let me know what you think.
Brendan
Hello Brendan,
I don't see any concern here connecting VOUT to QOD directly.
Still, you can connect 1k or 2k resistance between VOUT and QOD since you are okay with any discharge time.
Thanks
Amrit