Dear Sir
I use LM5117EVAL to verify 3 kind of MOS ,
The result is as below for Vin=48V to Vout=12V/6A
PSMN5R5-60YS (60V) ==> Spike = 60V and Efficiency = 94.5%
CSD19533Q5 (100V) ==> Spike = 93V and Efficiency = 91.5%
CSD19531Q5 (100V) ==> Spike = 91V and Efficiency = 90.5%
I can't make sure this result is correct
I use similar Iq MOS ,but have large spike
I use better rds(on) MOS ,but the efficiency is lower than higher Rds(on) solution
If we don't change any value of component on LM5117EVM and just change the MOS
Which solution is better that I can have the same efficiency (around 94%~95%) and have lower spike (Vin max = 57V ,continue is 48V)