This thread has been locked.
If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.
I use LM5117EVAL to verify 3 kind of MOS ,
The result is as below for Vin=48V to Vout=12V/6A
PSMN5R5-60YS (60V) ==> Spike = 60V and Efficiency = 94.5%
CSD19533Q5 (100V) ==> Spike = 93V and Efficiency = 91.5%
CSD19531Q5 (100V) ==> Spike = 91V and Efficiency = 90.5%
I can't make sure this result is correct
I use similar Iq MOS ,but have large spike
I use better rds(on) MOS ,but the efficiency is lower than higher Rds(on) solution
If we don't change any value of component on LM5117EVM and just change the MOS
Which solution is better that I can have the same efficiency (around 94%~95%) and have lower spike (Vin max = 57V ,continue is 48V)
Product Marketing Engineer
We are glad that we were able to resolve this issue, and will now proceed to close this thread.
If you have further questions related to this thread, you may click "Ask a related question" below. The newly created question will be automatically linked to this question.
All content and materials on this site are provided "as is". TI and its respective suppliers and providers of content make no representations about the suitability of these materials for any purpose and disclaim all warranties and conditions with regard to these materials, including but not limited to all implied warranties and conditions of merchantability, fitness for a particular purpose, title and non-infringement of any third party intellectual property right. No license, either express or implied, by estoppel or otherwise, is granted by TI. Use of the information on this site may require a license from a third party, or a license from TI.
TI is a global semiconductor design and manufacturing company. Innovate with 100,000+ analog ICs andembedded processors, along with software, tools and the industry’s largest sales/support staff.