Hi,
I am planning to use ISO5852S as a high-side gate driver using a bipolar supply. One of the main reasons behing choosing this IC is a seperate Vee pin. I plan to provide +20V and -5V from the secondary winding of a transformer and the common ground point of those two rails will be connected to the GND2 pin of the IC (A basic schematic of the voltage rails of the transformer and the common ground is posted below for reference). I am planning to use this gate driver to drive a series stack of MOSFETs at a supply voltage upto 5 kV in a high-side configuration. My questions are as follows.
1. Is my understanding of the bias/power supply connection to the gate driver IC is correct?
2. Can the gate driver be used in a high-side application?
Thanks in advance.