DRV5013-Q1: Absolute Max Rating

Shoji-san,

Unlike TMR or GMR sensors, Hall-effect elements are not damaged by large input fields.  DRV5013's thresholds are set such that the input field must exceed BOP or BRP to trigger state changes.  When an external field is applied, we can predict the voltage across the Hall-element using this formula:

V_H = (I * B) / (n * e * d)

where:

I = applied current

B = applied external field

n = charge carrier density

e = electron charge (1.602e-19)

d = sensor thickness

Now, the concern here I think you are raising is what happens to the Hall voltage when our normal input field is increased from 10 mT by 1000 times to something like 10T.  Firstly, there is some limitation to how the material will behave, and it would saturate at very large fields such that we'd stop seeing any increase in voltage.  Secondly, the internal biasing would have to provide the energy to create such a voltage difference across the material and the internal circuits would not be able to generate anything that would result in damage from these extreme cases.  What we should expect to see in such a case is that the voltage clamps to the internal regulation and biasing of the device.

Thanks,

Scott