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TMS320F280025: Time difference of using different ePWM OST methods

Bo XU
Prodigy 100 points
Part Number: TMS320F280025

I want to know the time of different ePWM OST methods

1）GPIO→input X-BAR to TZ directly;

2)  GPIO→input X-BAR→ePWM X-BAR→ePWM DC→ePWM OST TZ;

How long does it take to shut off ePWM channles usig the 2 methods above.

I can find some data in the datasheet of 280025, sec 7.13.1 Enhanced Pulse Width Modulator. It says td(TZ-PWM) <25ns.

But I can't find ePWM X-BAR and ePWM DC time parameters.

  • 0
    TI__Genius 13830 points

    Hi Bo XU,

    We don't have exact time parameters for the XBARs since each input path to the XBAR muxes has a different propagation delay. The Input XBAR -> TZ trip is more commonly used so we've documented the max value of 25 ns as you've listed here. What do you need the exact timing difference for?

    Thank you,

    Luke

  • 0 in reply to Luke Jones
    Prodigy 100 points

    280025 has 3 direct TZs. Maybe more than 3 IOs we need to config in order to shut off Mosfet gate driver, so I need to  config through the path Input XBAR-ePWM XBAR-ePWM DC-ePWM TZ. I want to know the time compared with the commmonly used direct TZ functions.

  • 0 in reply to Bo XU
    TI__Genius 13830 points

    Hi Bo,

    Unfortunately we have no specified timings for this. The timing difference will be minimal, but I would suggest testing the different trip methods on a basic EPWM example to observe the difference and determine if it meets your requirements.

    Thank you,

    Luke