Hi
Let me detail the background of the problems:
- Vdd=3.1V
- To save power, the µC is put in sleep mode.
To wake it up, we use a GPIO pin. We configure this pin as input with an external pulldown resistor of 100K (schematic in the attached file). Once the GPIO detects a high input state, the µC will be woken up.
- To give a high input state to the GPIO, we have a near-field pcb antenna in the circuit that senses an external near-field signal. The waveform of the near-field signal received at the antenna is a 50 Mhz sine wave. The amplitude is difficult to determine, because we add extra files for the measurement, so the signal must be amplified.
Could you tell me what conditions must be satified to wake up the µC?
In my opinion (I am not sure)
1) the near field signal received must have an amplitude greater than VIT+.
In your datasheet, VIT+ is between 1.35 and 2.25 V. Does this mean that the high input voltage varies from one microcontroller to another? Or does it mean that for the same microcontroller, the high input voltage can vary?
2) Signal level duration must be satisfied for high input detection. I can't find this information in your datasheet.
3) The duration of the input high state must be satisfied for the MCU to wake up. I found the information below. Can you confirm that my understanding is correct?

As we are using an 50Mhz external wakeup signal, the duration is 20ns which is not long enough. the we can NOT wake up the µC. To solve this, we use a diode bridge to redresse the wakeup signal.
Thank you
Best
Liang
