• State TI Thinks Resolved
  • Locked Locked
  • Replies 3 replies
  • Answers 2 answers
  • Subscribers 31 subscribers
  • Views 281 views
  • Users 0 members are here
Support feedback
Options
Options
Similar topics

This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

DRV8870: Spec. of N-FET body diode - DRV8870/DRV8231

Darren Wen
Prodigy 260 points
Part Number: DRV8870
Other Parts Discussed in Thread: DRV8231A, , DRV8231

Hi team,

Could you help to share the spec. of N-FET body diode?

How much current can the body diode of the N-FET stand to make sure IC will not damage? I would like to double check this spec. of DRV8870\DRV8231A with you.

Thanks.

  • 0
    TI__Mastermind 22150 points

    Hey Darren,

    The built in body diodes are designed to carry the maximum load current of the device during switching or overcurrent events. During other times, the current should flow through the FETs.  The device won't be damaged by current through the body diode of any of our devices.

    Regards,

    Jacob

  • 0
    TI__Mastermind 45370 points

    Jacob, 

    1. We find that DRV8231 do not tell the typical and max value of IOCP, but DRV8870 do, could you help to give your comment about the reason?

    DRV8231 OCP information on DS

    DRV8870 OCP information on DS

    1. If a 8A current (should > Iocp) happen at slow decay or high-z mode, will the device detect and trigger protect?
    2. If the 8A current is only the peak current (ns level), can device detect and trigger OCP? Will FET damage during the transient event?

    Thank you,

    Adam

  • 0 in reply to Adam Torma
    TI__Mastermind 37683 points

    Adam,

    Adam Torma said:
    If a 8A current (should > Iocp) happen at slow decay or high-z mode, will the device detect and trigger protect?

    Yes. It will be detected as long as the DRV is awake and logic circuitry is awake.

    Adam Torma said:
    If the 8A current is only the peak current (ns level), can device detect and trigger OCP? Will FET damage during the transient event?

    It will be detected if the current is higher than IOCP for longer than the deglitch time. Although there is a higher level analog current clamp to prevent damage due to extreme current during the deglitch time. Below is an example taken from this app-note. The current is way above the OCP limit for a short time and then clamped to a lower level for the remainder of the deglitch time until the OCP fault is detected. The damage can occur during the short time before the current is clamped.

    I hope this answers your questions.

    BR,

    Pablo