Hi
I'm a little confused about the Idrive setting. Below is what the spec for DRV8343S says.
For MOSFETs with a known gate-to-drain charge Qgd, desired rise time (tr), and a desired fall time (tf). IDRIVEP >Qgd * tr
However,It seems that the MOS will charge Qgs first than Qgd. Is the VGS rise time possible to concern the Qgs+Qgs, not just Qgd?
Btw, for Qg restriction:
Trapezoidal 120° Commutation: IVCP > Qg × ƒPWM
Sinusoidal 180° Commutation: IVCP > 3 × Qg × ƒPWM
Is it a slip of pen?It can be multiplied by 2?
Trapezoidal 120° Commutation: IVCP > 2 × Qg × ƒPWM ( for 2 MOS turn on the same time)
Sinusoidal 180° Commutation: IVCP > 6 × Qg × ƒPWM (for 6 MOS turn on one duty cycle)
and the Qg is for Gate charge total?
Regards
Arrow