Hi,
When I use TI LMG3410R050 GaN have some problems, hope you can reply.
I want to confirm the IC, so I use the double pulse test to measure it. To avoid damage to upper device in the third quadrant, so I use the SiC diode.
Then, I give the under device two pulse signal. I test condition
Expected to observe GaN transient behavior at 400V. When Vin smaller than 200V, the waveforms is normal.
The questions I want to ask are as follows:
1.When GaN turn on, the input is drop(The bigger the Vin, the more obvious the drop). But when Vin is 0, The input signal is normal.
2.When Vin is 210V, the under device(GaN) Vds is turn off during turn on.
I measure all the signals that can cause a fault.
When the fault signal is activated, the signal about UVLO is not abnormal.
