When applied as outlined in the LM3445 Data Sheet and Application Note, the resulting circuit is susceptible to failures of the main switching NFET.
The FET becomes shorted at all terminals and the obviously high-voltage event that caused the failure is coupled through the drain-gate connection inside the FET to the gate terminal, where it is fed to the drive pin of the LM3445 and destroys the LM3445.
I need a way to stop these failures. I am using a 600V NFET: STP11N60DM2 from ST Microelctronics.
Have you had a similar problem with this design from the LM3445 App Note? How did you solve it.
