Dear Team,
Please help me to confirm the lower limit of the Vds specification of CSD16415Q5, whether there is no lower limit requirement or the specification is incomplete, Thanks!
Many Thanks,
Jimmy
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Dear Team,
Please help me to confirm the lower limit of the Vds specification of CSD16415Q5, whether there is no lower limit requirement or the specification is incomplete, Thanks!
Many Thanks,
Jimmy
Hello Jimmy,
Thanks for the inquiry. TI does not include a minimum Vds specification in the datasheet for any of our FETs. However, because of their structure, all power MOSFETs have an intrinsic body diode from drain-to-source that will conduct if it is forward biased when the FET is off. For the CSD16415Q5, if the source is at a high enough voltage (~0.8V) with respect to the drain it will be forward and conduct current.
Best Regards,
John Wallace
TI FET Applications
Hi Jimmy,
Let me clarify my earlier response. TI specs the abs max VDS on page 1 of the datasheet and the minimum breakdown voltage, BVDSS in the electrical characteristics table further down in the datasheet. These values are usually the same but some power block devices specify a transient abs max value that the device can withstand for a very short time period.
Thanks,
John