LMZ12008 UVLO Thresholds

I'm having some trouble understanding how to set the UVLO thresholds for the LMZ12008 module.  Looking at the data sheet, page 15, the example gives R_ENT = 42.2kΩ and R_ENB = 12.7kΩ, for "a rising UVLO of 5.51V."  This works fine using equation 1:

     R_ENT / R_ENB = (V_{IN UVLO} / 1.274V) - 1

     V_{IN UVLO} = 1.274 (1 + R_ENT / R_ENB)

     V_{IN UVLO} = 1.274 (1 + 42200 / 12700)

     V_{IN UVLO} = 1.274 * 4.323

     V_{IN UVLO} = 5.507V

However, equations 2 and 3 (obviously) give different answers.  Equation 2:

     V_EN(rising) = 1.274V (1 + (R_ENT ‖ 2MΩ) / R_ENB)

     V_EN(rising) = 1.274 (1 + (42200 ‖ 2000000) / 12700)

     V_EN(rising) = 1.274 (1 + (41328 / 12700)

     V_EN(rising) = 1.274 * 4.254

     V_EN(rising) = 5.419V

...and equation 3:

     V_EN(falling) = V_EN(rising) - 13µA (R_ENT ‖ 2MΩ ‖ R_ENB + R_ENH)

     V_EN(falling) = 5.419 - 0.000013 (42200 ‖ 2000000 ‖ 12700 + 100)   [R_ENH = 100Ω from Fig. 50, pg 16]

     V_EN(falling) =5.419 - 0.000013 (9714.7 + 100)

     V_EN(falling) =5.419 - 0.128

     V_EN(falling) =5.291V

Is equation 1 intended to calculate a threshold without hysteresis, while 2 and 3 include hysteresis and thus provide a spread of slightly lower values?

How does equation 1 avoid the effect of the 2MΩ internal resistance parallel to R_ENT?

I want a rising threshold of ~13.2V and a falling threshold of ~12.8V.  Using equations 2 and 3, and starting with R_ENT = 402kΩ, I come up with values of R_ENB = 35.7kΩ and R_ENH = 0Ω (omitted), which I calculate to provide V_EN(rising) = 13.22V and V_EN(falling) = 12.80V.  EN input is safe, with a max of 1.93V at V_IN = 20V.

Are these calculations correct, and will it work with these values?

Thanks,

Eric