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Original question:

BQ24610: Boost from VBAT damage MOSFET and BQ24610

BQ24610: Boost from VBAT damage MOSFET and BQ24610

Hugo Liu
Genius 5095 points
Part Number: BQ24610

Hi Sir,

if insertion or removal of battery packs test, then Our customer product have BTST 10R/REGN Schottky/Low side MOSFET damage issue,

is this issue Related CE sequence? Our customer CE is link to detect BATTERY.

  • 0
    TI__Mastermind 20300 points

    Hello Hugo,

    Can you please show the full schematic of bq24610 connection? 

    Can you also capture the failure at battery plug in?

  • 0 in reply to Jing Zou
    Genius 5095 points

    Hi Sir,

    Could you please share you mail address for me,

    CH1=High Side Gate

    CH2=Low Side Gate

    CH3=PHASE

  • 0 in reply to Hugo Liu
    TI__Mastermind 20300 points
    Does the bq24610 IC get damaged? Or just BTST 10R/REGN Schottky/Low side MOSFET get damaged?
    Is the waveform at battery plug in? Why is Low side gate is high when no power is connected?
    Also 0402 BTST resistor footprint is too small. Suggest to change to 0603.
  • 0 in reply to Jing Zou
    Genius 5095 points
    Hi Sir,

    We are checking with customer now.

    Hugo
  • 0 in reply to Hugo Liu
    Genius 5095 points

    Hi Sir,

    The damage have BQ24610 Pin18 & Pin19 short,  BTST 10R=1K(damage), REGN Schottky=short(damage), Low side(damage)

    Battery plug in Vout max is ADP in 19V.

    we are see the TI BQ24610EVM REGN Schottky is used the ZLLS350 Continuous Forward current  380mA,

    But customer is D4=RB751V(M)-40(TE17)/SOD-323 Average rectified Forward current 30mA, is the level too small damage D4?

  • 0 in reply to Hugo Liu
    Genius 5095 points
    Hi Sir,

    we are change the D4=1N4148 improved this issue, insertion or removal of battery packs over 100 number of times,not any Components Damage,

    May I double confirm with you?
    What is D4 Value of max current?
    What is BQ24610 internal 6V LDO Io max current?

    Hugo
  • 0 in reply to Hugo Liu
    TI__Mastermind 20300 points
    REGN here is used for low-side driver and high-side driver bootstrap voltage by connecting a small-signal Schottky diode from REGN to BTST.
    The current is not related to the 6V LDO output capability. The D4 diode is used to transfer charge from REGN cap to BTST cap.