BQ24610: Boost from VBAT damage MOSFET and BQ24610

Hugo Liu

Part Number: BQ24610

Hi Sir,

if insertion or removal of battery packs test, then Our customer product have BTST 10R/REGN Schottky/Low side MOSFET damage issue,

is this issue Related CE sequence? Our customer CE is link to detect BATTERY.

over 7 years ago

0 Jing Zou over 7 years ago

TI__Mastermind 20300 points

Hello Hugo,

Can you please show the full schematic of bq24610 connection?

Can you also capture the failure at battery plug in?

0 user5376884 over 7 years ago in reply to Jing Zou

Prodigy 40 points

GC603_R13_DSN.pdf

0 Hugo Liu over 7 years ago in reply to Jing Zou

Genius 5095 points

Hi Sir,

Could you please share you mail address for me,

CH1=High Side Gate

CH2=Low Side Gate

CH3=PHASE

0 Jing Zou over 7 years ago in reply to Hugo Liu

TI__Mastermind 20300 points

Does the bq24610 IC get damaged? Or just BTST 10R/REGN Schottky/Low side MOSFET get damaged?
Is the waveform at battery plug in? Why is Low side gate is high when no power is connected?
Also 0402 BTST resistor footprint is too small. Suggest to change to 0603.

0 Hugo Liu over 7 years ago in reply to Jing Zou

Genius 5095 points

Hi Sir,

We are checking with customer now.

Hugo

0 Hugo Liu over 7 years ago in reply to Hugo Liu

Genius 5095 points

Hi Sir,

The damage have BQ24610 Pin18 & Pin19 short, BTST 10R=1K(damage), REGN Schottky=short(damage), Low side(damage)

Battery plug in Vout max is ADP in 19V.

we are see the TI BQ24610EVM REGN Schottky is used the ZLLS350 Continuous Forward current 380mA,

But customer is D4=RB751V(M)-40(TE17)/SOD-323 Average rectified Forward current 30mA, is the level too small damage D4?

0 Hugo Liu over 7 years ago in reply to Hugo Liu

Genius 5095 points

Hi Sir,

we are change the D4=1N4148 improved this issue, insertion or removal of battery packs over 100 number of times,not any Components Damage,

May I double confirm with you?
What is D4 Value of max current?
What is BQ24610 internal 6V LDO Io max current?

Hugo

0 Jing Zou over 7 years ago in reply to Hugo Liu

TI__Mastermind 20300 points

REGN here is used for low-side driver and high-side driver bootstrap voltage by connecting a small-signal Schottky diode from REGN to BTST.
The current is not related to the 6V LDO output capability. The D4 diode is used to transfer charge from REGN cap to BTST cap.

Power management

Power management forum

BQ24610: Boost from VBAT damage MOSFET and BQ24610