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BQ24610: BQ24610 P-MOS damage problem

Kun Yuan
Intellectual 945 points
Part Number: BQ24610

Hi!

In my application, the Vin is 12V/3A. The battery charge condition is 8.4V/4A. We met a problem that the P-MOS will be random damage. You can see the Q2 in the schematic. Q1 is always ok.

Our design is based on official design. Include the all part number ,such as mosfet , chock.

Can I get your swift support to help the reason?

  • 0
    TI__Mastermind 24075 points

    Hi Kun,

       Do you have input snubber on your circuit? Can you take a waveform of VCC, adapter current, ACDRV when IC is not damaged, and when it is damaged? Just to confirm, what specific PFET are you using for Q2? Are you able to isolate what exactly on the PFET is damaged?

  • 0 in reply to Kedar Manishankar
    Intellectual 945 points

    Hi Kedar,

    we use Vishay SI4401BDY at Q2. we have made more than 200 sets productions. There are about 15 sets that the P-MOS is damaged. We can't get the key to resolve it , so We want to get some help to analyze and resolve the problems

  • 0 in reply to Kun Yuan
    TI__Mastermind 24075 points

    Hi Kun,

        This is a 40V rated P channel MOSFET so there should be no way that ringing at the input, when your input is 12V, should exceed the rating of the MOSFET.  The Id current rating of around 9A also likely should not be violated. Let me know if you can get the scope capture I mentioned above,as this would tell me if either of the above MOSFET parameters are being violated (I doubt it). 

        Are the PFET damaged on input adapter plug in? What is your observed charger behavior when PFET is damaged, and how are you able to tell that the specific PFET is damaged?

  • 0 in reply to Kedar Manishankar
    TI__Mastermind 24075 points

    Hi Kun,

       We have not heard from you in a while and assume you were able to resolve your issue. If not feel free top open a new thread.