Hello ,
We have a need on the TPS5420-EP (10.000 PCEs / Year), but before we need more technical informations about the BiCMOS LBC4 BOA process technology :
-The feature size : 0.35 µm , 0.32 µm ??
-The substrate : SOI ? n / p-type ?
-The isolation : shallow / deep trench, some nm buried oxide
-The gate oxide : Thickness LV & HV gate oxide
Waiting for your feedback as soon as you can and hope that we can work together .
Best regards .