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Original question:

TIDA-010210: Power Limitations

TIDA-010210: Power Limitations

Ahmed Hussein
Prodigy 200 points
Part Number: TIDA-010210

We have asked before about Current Limitations of daughter cards 

Thanks to Riccardo answer before

   "the daughter board based on GaN technology is not able to reach 16 Arms because the current layout does not allow a higher switching speed. The maximum switching speed that we can achieve without no problem is 30     kV/us.

   Currently, this issue is addressed and we are improving the layout by keeping the same device.

   From the calculation that I made, we are going to be able to switch up to 100 kV/us with the new layout. This significant rising in the switching speed will allow the daughter board to work at 16 A operation."

We need to know what is the maximum current limit of the GaN Leg now while switching at " 30 kV/us ", and what is  maximum current limit of SiC MOSFET Leg in the current layout?, does it have the same limitation regarding switching speed ?.

  • 0
    TI__Intellectual 2590 points

    Hi,

    we have never tested these operating conditions: 30 kV/us and higher currents.

    Based on my calculations, the nominal current of GaN will be decreased from 16 A to 12.5 A when the switching speed is decreased. These two conditions should present the same losses.

    Just for your info, in SiC daughter board we have implemented Cascode JFET. With this device, it is not very easy to control the switching speed because they have an internal Si MOSFET.

    From a thermal point of view, the SiC leg should be able to withstand thermally the 16 A because of TO 247 package plus a better implemented heat sink.

    I hope that I have fully answered all your questions.

    Best Regards

    Riccardo