The offset of the TLV274-Q1 is measured with the following circuit configuration, and the result is shown below.
Q1. The offset drift value is calculated as 0.2mV difference at 25 ° ==> 125 °, Vio offset full range value is very large at 7mV. Can I understand that the Vio offset full range has a large value due to the offset caused by manufacturing variations in each IC?
Can I understand that the temperature-dependent variation is about 0.2mV at about 100 degrees Celsius?
Q2.Could you advise me on the circuit configuration and the method that can minimize the effect of Voffset of the product?
Thank you!
Best regards!
