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Dear Sir or Madam
I experience measurement errors occasionally, where it seems that the gain is too low. It helps to change INA126, but since there are 2 almost identical cycles and it is always the same that has the problem, I suspect there is something on the edge of the INA126 work area.
The only difference between the two circuits is the resistance from IN- (pin 2) to REF (pin 5). In the "good" circuit the resistor is 5k1Ohm and in the second it is approx. 10 times larger.
The input resistance of IN + is approx. 52k Ohm, RG is 1M Ohm, RL is 24k Ohm.
The circuits are used to measure on a PT100 sensor.
I have measured the gain to about 4.6 and it should be 5.08.
It is not always the fault that shows right away, so it may take several days for it to show up, which makes it more difficult to find.
Hopefully someone in here can point me in the right direction for my investigation.
Hello Thomas
Hier is a part of the schematic. U10 is okay and U12 has measuring issue.
I hope you can see the schematic. Here it just indicates that something is attached/inserted.
Regards Soren
Hi Kai
I have thought about that myself and have tried to short-circuit these resistors, but this did not make any difference in the measurements.
/Soren
Hello Soren,
Understanding and resolving what is inducing the INA126 high offset could be a difficult issue to resolve. First off, we need your assurance that the INA126 devices were obtained directly from TI, or a TI authorized distributor. If that is the case, the product would have been assembled, handled, tested and packaged following strict ESD procedures, and strict compliance requirements in place. If ESD damage is the issue, then I would expect that it would had to have occurred sometime after the devices were removed from their the ESD protective packaging in which they were packaged and shipped.
If the INA126 devices were still undamaged after being installed in the PC board, then an in-circuit ESD or Electrical Overstress (EOS) event would be the only mechanisms that would explain subsequent electrical damage. Normally, a very high series input resistance of 5.1 kilohms, or 47 kilohms will go a long way in limiting the input current that might be forced to flow during an ESD, or EOS event. The voltage level associated with the event would have to be very high to result in damaging input current levels. In the event of an out-of-circuit ESD event where the duration of the event is very limited in time, the ESD cells and internal absorption device would become activated and dissipate the power associated with the event. However, if the ESD voltage exceeds the +/-500 V HBM rating, then the cells or internal circuits could be damaged. There is also the possibility of a CDM ESD condition, which isn't specified for the INA126 but might occur. In either case ESD damage could explain the high offset.
In-circuit EOS events occurring at the device inputs, supply pins or output can result in device damage. If there is the potential for EOS, then we often recommend the inclusion of transient voltage suppressors (TVS) at the circuit points where the EOS occurs. TVS devices used at the input of instrumentation amplifier such as the INA126 are different than the TVS devices used at the power supply pins. The input protection needs to exhibit low capacitance and low leakage current as to have little effect on the active circuit performances. Companies such as Littelfuse make a variety of TVS protection devices. Here is a link to such a device:
They also produce TVS devices suitable for power supply pin protection. TI has no affiliation with Littelfuse, and I provide this reference for informational purposes only. Please contact them for assistance with their TVS products.
Regards, Thomas
Precision Amplifiers Applications Engineering