• State Resolved
  • Locked Locked
  • Replies 3 replies
  • Subscribers 47 subscribers
  • Views 238 views
  • Users 0 members are here
Support feedback
Options
Options
Similar topics

This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

LMV762: Equivalent Input Structure?

Kotaro Yamashita
Intellectual 2180 points
Part Number: LMV762
Other Parts Discussed in Thread: LMV751

Hi Team,

My customer would like to know "Equivalent Input Structure" about LMV762. Could you share this?

Regards,

Kotaro Yamashita

  • 0
    TI__Guru 51566 points

    Hello Kotaro,

    The input is a cascoded P-Channel CMOS input stage, based off the LMV751 low noise op-amp. Any further details are considered proprietary.

    Bias currents are in the pA's. The bias currents are dominated by the ESD diode leakages (conventional ESD diode protection from the input pins to each supply), thus bias currents will double every 10°C.

    Do you know what they are trying to determine?

  • 0 in reply to Paul Grohe
    TI__Intellectual 2180 points

    Hi Paul,

    Customer would like to understand input structure for protection. So, ESD information may help to resolve thier concern. 

    Could you prepare image of ESD structure in your comments?

    Regards,

    Kotaro Yamashita 

  • 0 in reply to Kotaro Yamashita
    TI__Guru 51566 points

    Hello Kotaro,

    The ESD protection is the standard "diode" protection from each input pin to each supply. This is common for CMOS designs.

    While the ESD "diodes" are more complicated than a simple diode, they look like and act like a diode to the customer and can be treated as a low leakage diode.

    if exceeding the input range, external clamping should be used as the ESD cells are not designed for continuous operation. Current should be limited to Abs Max (usually 10mA) or less.