Tool/software:
Hi TI
TPS4H160BQPWPRQ1 driver capacitive load. HSD will clamp current output when inrush current over setting limit value.
I have 2 question
1. How to reach this technology? I'm guessing you're doing the output current clamping by control the variable resistance region of the MOS
2. how to calculate the HSD die rise temperture? I need know at 85 deg the HSD allow clamp time? How to calculate?