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Tool/software:
Hi TI
TPS4H160BQPWPRQ1 driver capacitive load. HSD will clamp current output when inrush current over setting limit value.
I have 2 question
1. How to reach this technology? I'm guessing you're doing the output current clamping by control the variable resistance region of the MOS
2. how to calculate the HSD die rise temperture? I need know at 85 deg the HSD allow clamp time? How to calculate?
Ling,
With a smaller current limit, you are able to charge more capacitance, however it takes longer to charge.
Best Regards,
Tim
Thanks what mean of Max Cap (1ms) uF?Is allow capacitance load and inrush current time?
I want to know how to calculate HSD allow clamp current time,if any tools can support this?
My load is a capacitance load,inrush current is 10A. Is other loading condition you need?
Ling,
This would be the maximum amount of capacitance that we can charge in 1ms with the spec'ed current limit.
The best option here would be to test out on the EVM or use the table above as a reference. Do you know what capacitance is on the load specifically? 10A is quite high so there will be considerable power dissipation.
Best Regards,
Tim
Hi 10A is inrush current,normal current is 0.5A,load capacitance assume 100uF,how to calculate this?