We use two UCC27201 to drive two half bridge in an H-bridge configuration for a brushed motor control. The voltage on the H-bridge could be between 18V and 28V. We have an RC circuit (10kohm and .1uF) connected to one one side of the brushed motor to test if the FETs are good (a built in test). We turn on one FET at a time and look at the output of the RC. For each Half-Bridge we turn on the low side FET for 2mS to charge the boot strap capacitor, and cause the output of the RC to be 0V. We then test the high side FET by turning it on, waiting 400uS and then measuring the voltage. If the voltage rose to above 1.75V the HS FET passed (clipped by a diode to 1.8V). We then turn on the LS FET for 2mS, read the voltage and verify it's below 1.25V to make sure the LS FET is good. The issue I'm concerned with is a false pass on the HS FET due to IHB charging the capacitor and making it look like the HS FET came on when it did not. The concern is if IHB is large enough it will cause the capacitor to charge from 0V to 1.75V within the 400uS. My spice simulation shows that if the total IHB (between the two FET drivers on the H-bridge) is more then 550uA then under worst case temperature (125°C, 75nF capacitance = .1uf nominal with -15% X7R, -10% aging).
Note: When I run a bench test the circuit works (IHB is not charging the capacitor fast enough during the 400uS given the HS FET did not come on like it was supposed to) and I'm only measuring 300uA going through the 10kohm resistor when all FETS off.
My question is do I need to worry about the worst case spec of .8mA IHB per FET = 1.6mA total between two FET drivers (again, my sim shows anything over 550uA with 75nF capacitor will cause the voltage to rise enough within the 400uS to cause a false pass on the HS FET). Again, I only measured 300uA total between the two FET drivers which does not coincide with the .4mA x 2 = .8mA typical value in the datasheeet.
Thanks,
Nick