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Tool/software:
Hello Team,
I am trying to find below information for OSPI0 Flash (currently 200MHz of NOR Flash using with DDR Mode)
Thanks,
Mani M
Hi Mani,
In PHY mode without data training (DDR Mode, without loopback) configuration, 6.1596ns of Delay time calculated for CLK to Data. If i consider this delay, its difficult to meet setup & hold timing requirements for 200MHz. In this case, what is the max frequency TDA4 can supports, Since our NOR Flash have 0.4ns as Setup & Hold time?
We suggest using DDR PHY Data Training mode. The highest frequency supported here is 166MHz.
Best Regards,
Matt
Hello Matt,
Thanks for your confirmation.
What about the values of below parameters?
Thanks,
Mani M
Hi Mani,
First, if you are using DDR PHY Data Training mode, you will only need to focus on this table:
T = OSPI_RD_DATA_CAPTURE_REG[DDR_READ_DELAY_FLD]
Where are you seeing this value? This is not a parameter in the switching characteristics that I see.
P = CLK cycle time
This is the clk period based on what speed mode you are using.
- M = OSPI_DEV_DELAY_REG[D_INIT_FLD]
- N = OSPI_DEV_DELAY_REG[D_AFTER_FLD]
Please see the TRM section 12.3.2.4.2 Configuring the OSPI Controller for Optimal Use for information on what these registers are and how they should be configured.
Best Regards,
Matt
Hello Matt,
In the datasheet, there is no timing & switching information for Data Training mode. Can you help me to get those information?
Thanks,
Mani M
Hi Mani,
The current version of the datasheet does not yet have this updated timing information. Pasted below is what the new datasheet will have.
For more details about features and additional description information on the device Octal Serial Peripheral Interface, see the corresponding sections within Signal Descriptions and Detailed Description.
Table 6-97 represents OSPI timing conditions.
PARAMETER | MIN | MAX | UNIT | ||
---|---|---|---|---|---|
INPUT CONDITIONS | |||||
SRI | Input slew rate | 3.3V, all modes | 2 | 6 | V/ns |
1.8V, PHY Data Training DDR with DQS | 0.75 | 6 | V/ns | ||
1.8V, all other modes | 1 | 6 | V/ns | ||
OUTPUT CONDITIONS | |||||
CL | Output load capacitance | All modes | 3 | 10 | pF |
PCB CONNECTIVITY REQUIREMENTS | |||||
td(Trace Delay) | Propagation delay OSPI_CLK trace |
No Loopback; Internal Pad Loopback |
450 | ps | |
Propagation delay OSPI_LBCLKO trace |
External Board Loopback | 2*L-30(2) | 2*L+30(2) | ps | |
Propagation delay OSPI_DQS trace |
DQS | L-30(2) | L+30(2) | ps | |
td(Trace Mismatch Delay) | Propagation delay mismatch OSPI_D[i:0](1), OSPI_CSn relative to OSPI_CLK |
All modes | 60 | ps |
Read and write data valid windows will shift due to variation in process, voltage, temperature, and operating frequency. A data training method may be implemented to dynamically configure optimal read and write timing. Implementing data training enables proper operation across temperature with a specific process, voltage, and frequency operating condition, while achieving a higher operating frequency.
Data transmit and receive timing parameters are not defined for the data training use case since they are dynamically adjusted based on the operating condition.
Table 6-82 defines DLL delays required for OSPI0/1 with Data Training. Table 6-83, Figure 6-98, Figure 6-99, Table 6-84, Figure 6-100, and Figure 6-101 present timing requirements and switching characteristics for OSPI0/1 with Data Training.
NO. | MODE | MIN | MAX | UNIT | ||
---|---|---|---|---|---|---|
O15 | tsu(D-LBCLK) | Setup time, OSPI0_D[7:0] valid before active OSPI0_DQS edge | DDR with DQS | (1) | ns | |
O16 | th(LBCLK-D) | Hold time, OSPI0_D[7:0] valid after active OSPI0_DQS edge | DDR with DQS | (1) | ns | |
O21 | tsu(D-LBCLK) | Setup time, OSPI0_D[7:0] valid before active OSPI0_DQS edge | SDR with External Board Loopback | (1) | ns | |
O22 | th(LBCLK-D) | Hold time, OSPI0_D[7:0] valid after active OSPI0_DQS edge | SDR with External Board Loopback | (1) | ns | |
tDVW | Data valid window (O15 + O16) | 1.8V, DDR with DQS | 1.4 | ns | ||
Data valid window (O21 + O22) | 1.8V, SDR with External Board Loopback | 1.7 | ns |
NO. | PARAMETER | MODE | MIN | MAX | UNIT | |
---|---|---|---|---|---|---|
O1 | tc(CLK) | Cycle time, OSPI0/1_CLK | 1.8V, DDR | 6.0 | 6.0 | ns |
O7 | 1.8V, SDR | 6.0 | 6.0 | ns | ||
O2 | tw(CLKL) | Pulse duration, OSPI0/1_CLK low | DDR | ((0.475P(1)) - 0.3) | ns | |
O8 | SDR | |||||
O3 | tw(CLKH) | Pulse duration, OSPI0/1_CLK high | DDR | ((0.475P(1)) - 0.3) | ns | |
O9 | SDR | |||||
O4 | td(CSn-CLK) | Delay time, OSPI0/1_CSn[3:0] active edge to OSPI0/1_CLK rising edge | DDR | ((0.475P(1)) + (0.975M(2)R(4)) + (0.028TD(5)) - 1) | ((0.525P(1)) + (1.025M(2)R(4)) + (0.055TD(5)) + 1) | ns |
O10 | SDR | |||||
O5 | td(CLK-CSn) | Delay time, OSPI0/1_CLK rising edge to OSPI0/1_CSn[3:0] inactive edge | DDR | ((0.475P(1)) + (0.975N(3)R(4)) - (0.028TD(5)) - 1) | ((0.525P(1)) + (1.025N(3)R(4)) - (0.055TD(5)) + 1) | ns |
O11 | SDR | |||||
O6 | td(CLK-D) | Delay time, OSPI0/1_CLK active edge to OSPI0/1_D[7:0] transition | DDR | (6) | (6) | ns |
O12 | SDR | |||||
tDIVW | Data invalid window (O6 Max - Min) | DDR | 1 | ns | ||
Data invalid window (O12 Max - Min) | SDR |
Figure 6-101 OSPI0/1 Switching Characteristics – PHY SDR Data Training
Best Regards,
Matt
Hello Matt,
Thanks for your confirmation.
Can you able to share this latest datasheet?
Thanks,
Mani M
Hi Mani,
The latest datasheet is not yet available. I don't have a revision to share currently, so I have given you the most up to date information above for the sections you need.
Best,
Matt